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RM2020ES9

RM2020ES9

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制造商部分
RM2020ES9
制造商
Rectron USA
描述
MOSFET N&P-CH 20V SOT363
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0875
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:750mA (Ta), 800mA (Ta)
rds on (max) @ id, vgs:1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA, 1.1V @ 250µA
栅极电荷 (qg) (max) @ vgs:1.8pC @ 10V, 750pC @ 4.5V
输入电容 (ciss) (max) @ vds:87pF @ 10V, 120pF @ 16V
功率 - 最大值:150mW (Ta), 800mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:SOT-363

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