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FDG6306P

FDG6306P

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制造商部分
FDG6306P
制造商
Sanyo Semiconductor/ON Semiconductor
描述
SMALL SIGNAL FIELD-EFFECT TRANSI
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
6000
在线数据表
-
询问

Product Specifications

Type 描述
系列:PowerTrench®
包裹:Bulk
零件状态:Active
场效应管类型:2 P-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:600mA
rds on (max) @ id, vgs:420mOhm @ 600mA, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:2nC @ 4.5V
输入电容 (ciss) (max) @ vds:114pF @ 10V
功率 - 最大值:300mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:SC-88 (SC-70-6)

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