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PMDPB28UN,115

PMDPB28UN,115

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制造商部分
PMDPB28UN,115
制造商
NXP Semiconductors
描述
NOW NEXPERIA PMDPB28UN - HUSON6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
312000
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:4.6A (Ta)
rds on (max) @ id, vgs:37mOhm @ 4.6A, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:4.7nC @ 4.5V
输入电容 (ciss) (max) @ vds:265pF @ 10V
功率 - 最大值:510mW (Ta), 8.33W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-UDFN Exposed Pad
供应商设备包:6-HUSON-EP (2x2)

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