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EPC2110ENGRT

EPC2110ENGRT

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制造商部分
EPC2110ENGRT
制造商
EPC
描述
GAN TRANS 2N-CH 120V BUMPED DIE
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0723
在线数据表
-
询问

Product Specifications

Type 描述
系列:eGaN®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Common Source
场效应管特征:GaNFET (Gallium Nitride)
漏源电压 (vdss):120V
电流 - 连续漏极 (id) @ 25°c:3.4A
rds on (max) @ id, vgs:60mOhm @ 4A, 5V
vgs(th) (最大值) @ id:2.5V @ 700µA
栅极电荷 (qg) (max) @ vgs:0.8nC @ 5V
输入电容 (ciss) (max) @ vds:80pF @ 60V
功率 - 最大值:-
工作温度:-40°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:Die
供应商设备包:Die

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