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BSZ15DC02KDHXTMA1

BSZ15DC02KDHXTMA1

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制造商部分
BSZ15DC02KDHXTMA1
制造商
IR (Infineon Technologies)
描述
MOSFET N/P-CH 20V 5.1/3.2A TDSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0549
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101, HEXFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel Complementary
场效应管特征:Logic Level Gate, 2.5V Drive
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:5.1A, 3.2A
rds on (max) @ id, vgs:55mOhm @ 5.1A, 4.5V
vgs(th) (最大值) @ id:1.4V @ 110µA
栅极电荷 (qg) (max) @ vgs:2.8nC @ 4.5V
输入电容 (ciss) (max) @ vds:419pF @ 10V
功率 - 最大值:2.5W
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:PG-TSDSON-8-FL

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