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SIZF916DT-T1-GE3

SIZF916DT-T1-GE3

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制造商部分
SIZF916DT-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET N-CH DUAL 30V
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1900
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen IV
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:23A (Ta), 40A (Tc)
rds on (max) @ id, vgs:4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
vgs(th) (最大值) @ id:2.4V @ 250µA, 2.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:22nC @ 10V, 95nC @ 10V
输入电容 (ciss) (max) @ vds:1060pF @ 15V, 4320pF @ 15V
功率 - 最大值:3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerWDFN
供应商设备包:8-PowerPair® (6x5)

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