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EM6K31GT2R

EM6K31GT2R

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制造商部分
EM6K31GT2R
制造商
ROHM Semiconductor
描述
MOSFET 2N-CH 60V 0.25A EMT6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
0392
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate, 2.5V Drive
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:250mA
rds on (max) @ id, vgs:2.4Ohm @ 250mA, 10V
vgs(th) (最大值) @ id:2.3V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:15pF @ 25V
功率 - 最大值:120mW
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:SOT-563, SOT-666
供应商设备包:EMT6

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