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FF8MR12W2M1B11BOMA1

FF8MR12W2M1B11BOMA1

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制造商部分
FF8MR12W2M1B11BOMA1
制造商
IR (Infineon Technologies)
描述
MOSFET 2N-CH 1200V AG-EASY2BM-2
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
45
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolSiC™+
包裹:Tray
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Silicon Carbide (SiC)
漏源电压 (vdss):1200V
电流 - 连续漏极 (id) @ 25°c:150A (Tj)
rds on (max) @ id, vgs:7.5mOhm @ 150A, 15V (Typ)
vgs(th) (最大值) @ id:5.55V @ 60mA
栅极电荷 (qg) (max) @ vgs:372nC @ 15V
输入电容 (ciss) (max) @ vds:11000pF @ 800V
功率 - 最大值:20mW (Tc)
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:AG-EASY2BM-2

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