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UM6K1NTN

UM6K1NTN

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制造商部分
UM6K1NTN
制造商
ROHM Semiconductor
描述
MOSFET 2N-CH 30V .1A SOT-363
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
15585
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Not For New Designs
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:100mA
rds on (max) @ id, vgs:8Ohm @ 10mA, 4V
vgs(th) (最大值) @ id:1.5V @ 100µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:13pF @ 5V
功率 - 最大值:150mW
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:UMT6

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