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NTMFD4C85NT1G

NTMFD4C85NT1G

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制造商部分
NTMFD4C85NT1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
POWER FIELD-EFFECT TRANSISTOR
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
183040
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual) Asymmetrical
场效应管特征:Standard
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:15.4A, 29.7A
rds on (max) @ id, vgs:3mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2.1V @ 250µA
栅极电荷 (qg) (max) @ vgs:32nC @ 10V
输入电容 (ciss) (max) @ vds:1960pF @ 15V
功率 - 最大值:1.13W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:8-DFN (5x6)

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