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HP8S36TB

HP8S36TB

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制造商部分
HP8S36TB
制造商
ROHM Semiconductor
描述
30V NCH+NCH MIDDLE POWER MOSFET,
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2421
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:-
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:27A, 80A
rds on (max) @ id, vgs:2.4mOhm @ 32A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:47nC @ 4.5V
输入电容 (ciss) (max) @ vds:6100pF @ 15V
功率 - 最大值:29W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:8-HSOP

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