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QS6K21TR

QS6K21TR

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制造商部分
QS6K21TR
制造商
ROHM Semiconductor
描述
MOSFET 2N-CH 45V 1A TSMT6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
12271
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Not For New Designs
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):45V
电流 - 连续漏极 (id) @ 25°c:1A
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:1.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:1.25W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:SOT-23-6 Thin, TSOT-23-6
供应商设备包:TSMT6 (SC-95)

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