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SI3900DV-T1-E3

SI3900DV-T1-E3

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制造商部分
SI3900DV-T1-E3
制造商
Vishay / Siliconix
描述
MOSFET 2N-CH 20V 2A 6-TSOP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
52428
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:2A
rds on (max) @ id, vgs:125mOhm @ 2.4A, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:4nC @ 4.5V
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:830mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:SOT-23-6 Thin, TSOT-23-6
供应商设备包:6-TSOP

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