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IRFHE4250DTRPBF

IRFHE4250DTRPBF

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制造商部分
IRFHE4250DTRPBF
制造商
International Components Corp.
描述
HEXFET POWER MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9000
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:86A (Tc), 303A (Tc)
rds on (max) @ id, vgs:2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
vgs(th) (最大值) @ id:2.1V @ 35µA, 2.1V @ 100µA
栅极电荷 (qg) (max) @ vgs:20nC, 53nC @ 4.5V
输入电容 (ciss) (max) @ vds:1735pF @ 13V, 4765pF @ 13V
功率 - 最大值:156W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:32-PowerVFQFN
供应商设备包:32-PQFN (6x6)

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