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DN2625DK6-G

DN2625DK6-G

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制造商部分
DN2625DK6-G
制造商
Roving Networks / Microchip Technology
描述
MOSFET 2N-CH 250V 1.1A 8VDFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9942
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tray
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Depletion Mode
漏源电压 (vdss):250V
电流 - 连续漏极 (id) @ 25°c:1.1A
rds on (max) @ id, vgs:3.5Ohm @ 1A, 0V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:7.04nC @ 1.5V
输入电容 (ciss) (max) @ vds:1000pF @ 25V
功率 - 最大值:-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-VDFN Exposed Pad
供应商设备包:8-DFN (5x5)

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