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SIZ200DT-T1-GE3

SIZ200DT-T1-GE3

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制造商部分
SIZ200DT-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET N-CH DUAL 30V
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
765
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen IV
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
rds on (max) @ id, vgs:5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
vgs(th) (最大值) @ id:2.4V @ 250µA
栅极电荷 (qg) (max) @ vgs:28nC @ 10V, 30nC @ 10V
输入电容 (ciss) (max) @ vds:1510pF @ 15V, 1600pF @ 15V
功率 - 最大值:4.3W (Ta), 33W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerWDFN
供应商设备包:8-PowerPair® (3.3x3.3)

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