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TPD3215M

TPD3215M

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制造商部分
TPD3215M
制造商
Transphorm
描述
GANFET 2N-CH 600V 70A MODULE
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
22
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:GaNFET (Gallium Nitride)
漏源电压 (vdss):600V
电流 - 连续漏极 (id) @ 25°c:70A (Tc)
rds on (max) @ id, vgs:34mOhm @ 30A, 8V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:28nC @ 8V
输入电容 (ciss) (max) @ vds:2260pF @ 100V
功率 - 最大值:470W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:Module
供应商设备包:Module

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