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NTQD6866R2G

NTQD6866R2G

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制造商部分
NTQD6866R2G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
SMALL SIGNAL N-CHANNEL MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
11244
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:4.7A
rds on (max) @ id, vgs:32mOhm @ 6.9A, 4.5V
vgs(th) (最大值) @ id:1.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:22nC @ 4.5V
输入电容 (ciss) (max) @ vds:1400pF @ 16V
功率 - 最大值:940mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-TSSOP (0.173", 4.40mm Width)
供应商设备包:8-TSSOP

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