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NVMFD5C650NLT1G

NVMFD5C650NLT1G

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制造商部分
NVMFD5C650NLT1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET 2N-CH 60V 111A S08FL
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9688
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:21A (Ta), 111A (Tc)
rds on (max) @ id, vgs:4.2mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2.2V @ 98µA
栅极电荷 (qg) (max) @ vgs:16nC @ 4.5V
输入电容 (ciss) (max) @ vds:2546pF @ 25V
功率 - 最大值:3.5W (Ta), 125W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:8-DFN (5x6) Dual Flag (SO8FL-Dual)

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