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NTJD1155LT1G

NTJD1155LT1G

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制造商部分
NTJD1155LT1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N/P-CH 8V 1.3A SOT363
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9600
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):8V
电流 - 连续漏极 (id) @ 25°c:1.3A
rds on (max) @ id, vgs:175mOhm @ 1.2A, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:400mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:SC-88/SC70-6/SOT-363

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