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VT6M1T2CR

VT6M1T2CR

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制造商部分
VT6M1T2CR
制造商
ROHM Semiconductor
描述
MOSFET N/P-CH 20V 0.1A VMT6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9572
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Logic Level Gate, 1.2V Drive
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:100mA
rds on (max) @ id, vgs:3.5Ohm @ 100mA, 4.5V
vgs(th) (最大值) @ id:1V @ 100µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:7.1pF @ 10V
功率 - 最大值:120mW
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:6-SMD, Flat Leads
供应商设备包:VMT6

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