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TSM6502CR RLG

TSM6502CR RLG

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制造商部分
TSM6502CR RLG
制造商
TSC (Taiwan Semiconductor)
描述
MOSFET N/P-CH 60V 24A/18A 8PDFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1758
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:24A (Tc), 18A (Tc)
rds on (max) @ id, vgs:34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:10.3nC @ 4.5V, 9.5nC @ 4.5V
输入电容 (ciss) (max) @ vds:1159pF @ 30V, 930pF @ 30V
功率 - 最大值:40W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerTDFN
供应商设备包:8-PDFN (5x6)

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