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IRFH4251DTRPBF

IRFH4251DTRPBF

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制造商部分
IRFH4251DTRPBF
制造商
IR (Infineon Technologies)
描述
HEXFET POWER MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9285
在线数据表
-
询问

Product Specifications

Type 描述
系列:FASTIRFET™
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Dual), Schottky
场效应管特征:Logic Level Gate
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:64A, 188A
rds on (max) @ id, vgs:3.2mOhm @ 30A, 10V
vgs(th) (最大值) @ id:2.1V @ 35µA
栅极电荷 (qg) (max) @ vgs:15nC @ 4.5V
输入电容 (ciss) (max) @ vds:1314pF @ 13V
功率 - 最大值:31W, 63W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerVDFN
供应商设备包:PG-TISON-8

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