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ALD1103PBL

ALD1103PBL

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制造商部分
ALD1103PBL
制造商
Advanced Linear Devices, Inc.
描述
MOSFET 2N/2P-CH 10.6V 14DIP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
727
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:2 N and 2 P-Channel Matched Pair
场效应管特征:Standard
漏源电压 (vdss):10.6V
电流 - 连续漏极 (id) @ 25°c:40mA, 16mA
rds on (max) @ id, vgs:75Ohm @ 5V
vgs(th) (最大值) @ id:1V @ 10µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:10pF @ 5V
功率 - 最大值:500mW
工作温度:0°C ~ 70°C (TJ)
安装类型:Through Hole
包/箱:14-DIP (0.300", 7.62mm)
供应商设备包:14-PDIP

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