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ALD111933PAL

ALD111933PAL

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制造商部分
ALD111933PAL
制造商
Advanced Linear Devices, Inc.
描述
MOSFET 2N-CH 10.6V 8DIP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9241
在线数据表
-
询问

Product Specifications

Type 描述
系列:EPAD®
包裹:Tube
零件状态:Active
场效应管类型:2 N-Channel (Dual) Matched Pair
场效应管特征:Standard
漏源电压 (vdss):10.6V
电流 - 连续漏极 (id) @ 25°c:-
rds on (max) @ id, vgs:500Ohm @ 5.9V
vgs(th) (最大值) @ id:3.35V @ 1µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:2.5pF @ 5V
功率 - 最大值:500mW
工作温度:0°C ~ 70°C (TJ)
安装类型:Through Hole
包/箱:8-DIP (0.300", 7.62mm)
供应商设备包:8-PDIP

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