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SIZF906BDT-T1-GE3

SIZF906BDT-T1-GE3

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制造商部分
SIZF906BDT-T1-GE3
制造商
Vishay / Siliconix
描述
DUAL N-CHANNEL 30 V (D-S) MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
9215
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen IV
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual), Schottky
场效应管特征:Standard
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
rds on (max) @ id, vgs:2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
vgs(th) (最大值) @ id:2.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:49nC @ 10V, 165nC @ 10V
输入电容 (ciss) (max) @ vds:1630pF @ 15V, 5550pF @ 15V
功率 - 最大值:4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerWDFN
供应商设备包:8-PowerPair® (6x5)

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