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AOSD62666E

AOSD62666E

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制造商部分
AOSD62666E
制造商
Alpha and Omega Semiconductor, Inc.
描述
MOSFET 2 N-CH 60V 9.5A 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
356
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:9.5A (Ta)
rds on (max) @ id, vgs:14.5mOhm @ 9.5A, 10V
vgs(th) (最大值) @ id:2.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:10nC @ 4.5V
输入电容 (ciss) (max) @ vds:755pF @ 30V
功率 - 最大值:2.5W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOIC

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