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BSC750N10NDGATMA1

BSC750N10NDGATMA1

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制造商部分
BSC750N10NDGATMA1
制造商
IR (Infineon Technologies)
描述
PFET, 3.2A I(D), 100V, 0.075OHM,
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
2624
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):100V
电流 - 连续漏极 (id) @ 25°c:3.2A
rds on (max) @ id, vgs:75mOhm @ 13A, 10V
vgs(th) (最大值) @ id:4V @ 12µA
栅极电荷 (qg) (max) @ vgs:11nC @ 10V
输入电容 (ciss) (max) @ vds:720pF @ 50V
功率 - 最大值:26W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerVDFN
供应商设备包:PG-TDSON-8-4

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