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SSM6P35AFE,LF

SSM6P35AFE,LF

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制造商部分
SSM6P35AFE,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
SMALL SIGNAL MOSFET P-CH X 2 VDS
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
490
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVII
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 P-Channel (Dual)
场效应管特征:Logic Level Gate, 1.2V Drive
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:250mA (Ta)
rds on (max) @ id, vgs:1.4Ohm @ 150mA, 4.5V
vgs(th) (最大值) @ id:1V @ 100µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:42pF @ 10V
功率 - 最大值:150mW (Ta)
工作温度:150°C
安装类型:Surface Mount
包/箱:SOT-563, SOT-666
供应商设备包:ES6

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