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SIZF906DT-T1-GE3

SIZF906DT-T1-GE3

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制造商部分
SIZF906DT-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET 2 N-CH 30V 60A POWERPAIR
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
658
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen IV
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:Standard
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:60A (Tc)
rds on (max) @ id, vgs:3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:22nC @ 4.5V, 92nC @ 4.5V
输入电容 (ciss) (max) @ vds:2000pF @ 15V, 8200pF @ 15V
功率 - 最大值:38W (Tc), 83W (Tc)
工作温度:-55°C ~ 150°C (TA)
安装类型:Surface Mount
包/箱:8-PowerWDFN
供应商设备包:8-PowerPair® (6x5)

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