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MMBTH10LT3G

MMBTH10LT3G

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制造商部分
MMBTH10LT3G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
RF SMALL SIGNAL BIPOLAR TRANSIST
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 射频
系列
-
有存货
110000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
晶体管型:NPN
电压 - 集电极发射极击穿(最大值):25V
频率转换:650MHz
噪声系数 (db typ @ f):-
获得:-
功率 - 最大值:225mW
直流电流增益 (hfe) (min) @ ic, vce:60 @ 4mA, 10V
电流 - 集电极 (ic) (max):-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:TO-236-3, SC-59, SOT-23-3
供应商设备包:SOT-23-3 (TO-236)

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