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HN3C10FUTE85LF

HN3C10FUTE85LF

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制造商部分
HN3C10FUTE85LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
RF TRANS 2 NPN 12V 7GHZ US6
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 射频
系列
-
有存货
111
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
晶体管型:2 NPN (Dual)
电压 - 集电极发射极击穿(最大值):12V
频率转换:7GHz
噪声系数 (db typ @ f):1.1dB @ 1GHz
获得:11.5dB
功率 - 最大值:200mW
直流电流增益 (hfe) (min) @ ic, vce:80 @ 20mA, 10V
电流 - 集电极 (ic) (max):80mA
工作温度:-
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:US6

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