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BFR949L3E6327

BFR949L3E6327

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制造商部分
BFR949L3E6327
制造商
IR (Infineon Technologies)
描述
RF BIPOLAR TRANSISTOR
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 射频
系列
-
有存货
13974
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
晶体管型:NPN
电压 - 集电极发射极击穿(最大值):10V
频率转换:9GHz
噪声系数 (db typ @ f):1dB ~ 2.5dB @ 1GHz
获得:21.5dB
功率 - 最大值:250mW
直流电流增益 (hfe) (min) @ ic, vce:100 @ 5mA, 6V
电流 - 集电极 (ic) (max):50mA
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:SC-101, SOT-883
供应商设备包:PG-TSLP-3-1

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