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US1M-E3/5AT

US1M-E3/5AT

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制造商部分
US1M-E3/5AT
制造商
Vishay General Semiconductor – Diodes Division
描述
DIODE GEN PURP 1KV 1A DO214AC
类别
分立半导体产品
家庭
二极管 - 整流器 - 单
系列
-
有存货
3954
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
二极管型:Standard
电压 - 直流反向 (vr) (max):1000 V
电流 - 平均整流 (io):1A
电压 - 正向 (vf) (max) @ if:1.7 V @ 1 A
速度:Fast Recovery =< 500ns, > 200mA (Io)
反向恢复时间 (trr):75 ns
电流 - 反向泄漏@ vr:10 µA @ 1000 V
电容@vr, f:10pF @ 4V, 1MHz
安装类型:Surface Mount
包/箱:DO-214AC, SMA
供应商设备包:DO-214AC (SMA)
工作温度 - 结:-55°C ~ 150°C

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