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FESB8JT-E3/81

FESB8JT-E3/81

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制造商部分
FESB8JT-E3/81
制造商
Vishay General Semiconductor – Diodes Division
描述
DIODE GEN PURP 600V 8A TO263AB
类别
分立半导体产品
家庭
二极管 - 整流器 - 单
系列
-
有存货
515
在线数据表
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Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
二极管型:Standard
电压 - 直流反向 (vr) (max):600 V
电流 - 平均整流 (io):8A
电压 - 正向 (vf) (max) @ if:1.5 V @ 8 A
速度:Fast Recovery =< 500ns, > 200mA (Io)
反向恢复时间 (trr):50 ns
电流 - 反向泄漏@ vr:10 µA @ 600 V
电容@vr, f:-
安装类型:Surface Mount
包/箱:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商设备包:TO-263AB
工作温度 - 结:-55°C ~ 150°C

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