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IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

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制造商部分
IRG8P50N120KD-EPBF
制造商
International Components Corp.
描述
IRG8P50N120 - DISCRETE IGBT WITH
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
7479
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
igbt型:-
电压 - 集电极发射极击穿(最大值):1.2 V
电流 - 集电极 (ic) (max):80 A
电流 - 集电极脉冲 (icm):105 A
vce(on) (max) @ vge, ic:2V @ 15V, 35A
功率 - 最大值:350 W
开关能量:2.3mJ (on), 1.9mJ (off)
输入类型:Standard
栅极电荷:315 nC
td(开/关)@ 25°c:35ns/190ns
测试条件:600V, 35A, 5Ohm, 15V
反向恢复时间 (trr):170 ns
工作温度:-40°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247AD

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