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HGTP12N60A4D

HGTP12N60A4D

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制造商部分
HGTP12N60A4D
制造商
Sanyo Semiconductor/ON Semiconductor
描述
IGBT 600V 54A TO220-3
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
211
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Last Time Buy
igbt型:-
电压 - 集电极发射极击穿(最大值):600 V
电流 - 集电极 (ic) (max):54 A
电流 - 集电极脉冲 (icm):96 A
vce(on) (max) @ vge, ic:2.7V @ 15V, 12A
功率 - 最大值:167 W
开关能量:55µJ (on), 50µJ (off)
输入类型:Standard
栅极电荷:78 nC
td(开/关)@ 25°c:17ns/96ns
测试条件:390V, 12A, 10Ohm, 15V
反向恢复时间 (trr):30 ns
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:TO-220-3
供应商设备包:TO-220-3

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