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FGB7N60UNDF

FGB7N60UNDF

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制造商部分
FGB7N60UNDF
制造商
Fairchild (ON Semiconductor)
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
994
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:NPT
电压 - 集电极发射极击穿(最大值):600 V
电流 - 集电极 (ic) (max):14 A
电流 - 集电极脉冲 (icm):21 A
vce(on) (max) @ vge, ic:2.3V @ 15V, 7A
功率 - 最大值:83 W
开关能量:99µJ (on), 104µJ (off)
输入类型:Standard
栅极电荷:18 nC
td(开/关)@ 25°c:5.9ns/32.3ns
测试条件:400V, 7A, 10Ohm, 15V
反向恢复时间 (trr):32.3 ns
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商设备包:TO-263AB (D²PAK)

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