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STGW50H65DFB2-4

STGW50H65DFB2-4

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制造商部分
STGW50H65DFB2-4
制造商
STMicroelectronics
描述
TRENCH GATE FIELD-STOP, 650 V, 5
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
75
在线数据表
-
询问

Product Specifications

Type 描述
系列:HB2
包裹:Tube
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):86 A
电流 - 集电极脉冲 (icm):150 A
vce(on) (max) @ vge, ic:2V @ 15V, 50A
功率 - 最大值:272 W
开关能量:629µJ (on), 478µJ (off)
输入类型:Standard
栅极电荷:151 nC
td(开/关)@ 25°c:18ns/128ns
测试条件:400V, 50A, 12Ohm, 15V
反向恢复时间 (trr):92 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-4
供应商设备包:TO-247-4

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