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IRG4PH50S-EPBF

IRG4PH50S-EPBF

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制造商部分
IRG4PH50S-EPBF
制造商
International Components Corp.
描述
IRG4PH50 - DISCRETE IGBT WITH AN
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
467
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
igbt型:-
电压 - 集电极发射极击穿(最大值):1.2 V
电流 - 集电极 (ic) (max):57 A
电流 - 集电极脉冲 (icm):114 A
vce(on) (max) @ vge, ic:1.7V @ 15V, 33A
功率 - 最大值:200 W
开关能量:1.8mJ (on), 19.6mJ (off)
输入类型:Standard
栅极电荷:167 nC
td(开/关)@ 25°c:32ns/845ns
测试条件:960V, 33A, 5Ohm, 15V
反向恢复时间 (trr):-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247AD

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