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STGW30M65DF2

STGW30M65DF2

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制造商部分
STGW30M65DF2
制造商
STMicroelectronics
描述
TRENCH GATE FIELD-STOP IGBT M SE
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
41
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):60 A
电流 - 集电极脉冲 (icm):120 A
vce(on) (max) @ vge, ic:2V @ 15V, 30A
功率 - 最大值:258 W
开关能量:300µJ (on), 960µJ (off)
输入类型:Standard
栅极电荷:80 nC
td(开/关)@ 25°c:31.6ns/115ns
测试条件:400V, 30A, 10Ohm, 15V
反向恢复时间 (trr):140 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247

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