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RGW00TS65DGC11

RGW00TS65DGC11

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制造商部分
RGW00TS65DGC11
制造商
ROHM Semiconductor
描述
650V 50A FIELD STOP TRENCH IGBT
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
192
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):96 A
电流 - 集电极脉冲 (icm):200 A
vce(on) (max) @ vge, ic:1.9V @ 15V, 50A
功率 - 最大值:254 W
开关能量:1.18mJ (on), 960µJ (off)
输入类型:Standard
栅极电荷:141 nC
td(开/关)@ 25°c:52ns/180ns
测试条件:400V, 50A, 10Ohm, 15V
反向恢复时间 (trr):95 ns
工作温度:-40°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247N

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