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NGB8206NTF4G

NGB8206NTF4G

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制造商部分
NGB8206NTF4G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
12600
在线数据表
-
询问

Product Specifications

Type 描述
系列:*
包裹:Bulk
零件状态:Obsolete
igbt型:-
电压 - 集电极发射极击穿(最大值):390 V
电流 - 集电极 (ic) (max):20 A
电流 - 集电极脉冲 (icm):-
vce(on) (max) @ vge, ic:1.9V @ 4.5V, 20A
功率 - 最大值:150 W
开关能量:-
输入类型:Logic
栅极电荷:-
td(开/关)@ 25°c:-
测试条件:-
反向恢复时间 (trr):-
工作温度:-
安装类型:Surface Mount
包/箱:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商设备包:D2PAK

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