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HGT1S10N120BNST

HGT1S10N120BNST

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制造商部分
HGT1S10N120BNST
制造商
Sanyo Semiconductor/ON Semiconductor
描述
IGBT 1200V 35A 298W TO263AB
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
4019
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
igbt型:NPT
电压 - 集电极发射极击穿(最大值):1200 V
电流 - 集电极 (ic) (max):35 A
电流 - 集电极脉冲 (icm):80 A
vce(on) (max) @ vge, ic:2.7V @ 15V, 10A
功率 - 最大值:298 W
开关能量:320µJ (on), 800µJ (off)
输入类型:Standard
栅极电荷:100 nC
td(开/关)@ 25°c:23ns/165ns
测试条件:960V, 10A, 10Ohm, 15V
反向恢复时间 (trr):-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商设备包:TO-263AB

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