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FGY75N60SMD

FGY75N60SMD

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制造商部分
FGY75N60SMD
制造商
Fairchild (ON Semiconductor)
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
50
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:Field Stop
电压 - 集电极发射极击穿(最大值):600 V
电流 - 集电极 (ic) (max):150 A
电流 - 集电极脉冲 (icm):225 A
vce(on) (max) @ vge, ic:2.5V @ 15V, 75A
功率 - 最大值:750 W
开关能量:2.3mJ (on), 770µJ (off)
输入类型:Standard
栅极电荷:248 nC
td(开/关)@ 25°c:24ns/136ns
测试条件:400V, 75A, 3Ohm, 15V
反向恢复时间 (trr):55 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3 Variant
供应商设备包:PowerTO-247-3

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