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NGTB40N120FL2WG

NGTB40N120FL2WG

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制造商部分
NGTB40N120FL2WG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
3839
在线数据表
-
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Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):1.2 V
电流 - 集电极 (ic) (max):80 A
电流 - 集电极脉冲 (icm):200 A
vce(on) (max) @ vge, ic:2.4V @ 15V, 40A
功率 - 最大值:535 W
开关能量:3.4mJ (on), 1.1mJ (off)
输入类型:Standard
栅极电荷:313 nC
td(开/关)@ 25°c:116ns/286ns
测试条件:600V, 40A, 10Ohm, 15V
反向恢复时间 (trr):240 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247

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