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PMPB20UN,115

PMPB20UN,115

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制造商部分
PMPB20UN,115
制造商
NXP Semiconductors
描述
MOSFET N-CH 20V 6.6A 6DFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
108000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:6.6A (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:25mOhm @ 6.6A, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:7.1 nC @ 4.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:460 pF @ 10 V
场效应管特征:-
功耗(最大值):1.7W (Ta), 12.5W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:6-DFN2020MD (2x2)
包/箱:6-UDFN Exposed Pad

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