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IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1

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制造商部分
IMBG120R350M1HXTMA1
制造商
IR (Infineon Technologies)
描述
TRANS SJT N-CH 1.2KV 4.7A TO263
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
918
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolSiC™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:SiC (Silicon Carbide Junction Transistor)
漏源电压 (vdss):1.2 kV
电流 - 连续漏极 (id) @ 25°c:4.7A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:468mOhm @ 2A, 18V
vgs(th) (最大值) @ id:5.7V @ 1mA
栅极电荷 (qg) (max) @ vgs:5.9 nC @ 18 V
vgs (最大值):+18V, -15V
输入电容 (ciss) (max) @ vds:196 pF @ 800 V
场效应管特征:Standard
功耗(最大值):65W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-TO263-7-12
包/箱:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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