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RFD16N05LSM

RFD16N05LSM

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制造商部分
RFD16N05LSM
制造商
Harris Corporation
描述
N-CHANNEL POWER MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4176
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):50 V
电流 - 连续漏极 (id) @ 25°c:16A (Tc)
驱动电压(最大 rds on,最小 rds on):4V, 5V
rds on (max) @ id, vgs:47mOhm @ 16A, 5V
vgs(th) (最大值) @ id:2V @ 250mA
栅极电荷 (qg) (max) @ vgs:80 nC @ 10 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):60W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-252AA
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63

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