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3LN01M-TL-E

3LN01M-TL-E

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制造商部分
3LN01M-TL-E
制造商
Sanyo Semiconductor/ON Semiconductor
描述
N-CHANNEL, MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:150mA (Ta)
驱动电压(最大 rds on,最小 rds on):1.5V, 4V
rds on (max) @ id, vgs:3.7Ohm @ 80mA, 4V
vgs(th) (最大值) @ id:1.3V @ 100µA
栅极电荷 (qg) (max) @ vgs:1.58 nC @ 10 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:7 pF @ 10 V
场效应管特征:-
功耗(最大值):150mW (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:SC-70/MCPH3
包/箱:SC-70, SOT-323

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